Academic Article
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Thermal and Environmental Stability of Semi-Transparent Perovskite Solar Cells for Tandems Enabled by a Solution-Processed Nanoparticle Buffer Layer and Sputtered ITO Electrode
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Thermal and Illumination Environments of Lunar Pits and Caves: Models and Observations From the Diviner Lunar Radiometer Experiment
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Thermal and magnetic properties of the spin-chain material Pr3RuO7
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Thermal and Nonlinear Dissipative-Soliton Dynamics in Kerr-Microresonator Frequency Combs
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Thermal and Structural Analysis of a Suspended Physics Package for a Chip-Scale Atomic Clock
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Thermal and thermo-oxidative degradation of tetrafluoroethylene-propylene elastomer above 300 °C
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Thermal asperity trends
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Thermal Atomic Layer Etching of Al2O3 Using Sequential HF and BCl3 Exposures: Evidence for Combined Ligand-Exchange and Conversion Mechanisms
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Thermal Atomic Layer Etching of Al2O3, HfO2, and ZrO2 Using Sequential Hydrogen Fluoride and Dimethylaluminum Chloride Exposures
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Thermal Atomic Layer Etching of Aluminum Nitride Using HF orXeF2 for Fluorination and BCl3 for Ligand Exchange
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Thermal atomic layer etching of amorphous and crystalline Al2O3 films
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Thermal atomic layer etching of cobalt using sulfuryl chloride for chlorination and tetramethylethylenediamine or trimethylphosphine for ligand addition
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Thermal atomic layer etching of CoO using acetylacetone and ozone: Evidence for changes in oxidation state and crystal structure during sequential exposures
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Thermal Atomic Layer Etching of CoO, ZnO, Fe2O3, and NiO by Chlorination and Ligand Addition Using SO2Cl2 and Tetramethylethylenediamine
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Thermal atomic layer etching of crystalline aluminum nitride using sequential, self-limiting hydrogen fluoride and Sn(acac)2 reactions and enhancement by H2 and Ar plasmas
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Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3
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Thermal Atomic Layer Etching of Gallium Oxide Using Sequential Exposures of HF and Various Metal Precursors
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Thermal atomic layer etching of germanium-rich SiGe using an oxidation and "conversion-etch" mechanism
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Thermal Atomic Layer Etching of Gold Using Sulfuryl Chloride for Chlorination and Triethylphosphine for Ligand Addition
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Thermal atomic layer etching of HfO2 using HF for fluorination and TiCl4 for ligand-exchange
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Thermal Atomic Layer Etching of Molybdenum Using Sequential Oxidation and Deoxychlorination Reactions
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Thermal Atomic Layer Etching of Nickel Using Sequential Chlorination and Ligand-Addition Reactions
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Thermal atomic layer etching of silicon nitride using an oxidation and "conversion etch" mechanism
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Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants
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Thermal Atomic Layer Etching of SiO2 by a "Conversion-Etch" Mechanism Using Sequential Reactions of Trimethylaluminum and Hydrogen Fluoride
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Thermal Atomic Layer Etching of Titanium Nitride Using Sequential, Self-Limiting Reactions: Oxidation to TiO2 and Fluorination to Volatile TiF4
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Thermal atomic layer etching of VO2 using sequential BCl3 and SF4 exposures: Observation of conversion, ligand-exchange, and oxidation state changes
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Thermal Atomic Layer Etching of Zinc Sulfide Using Sequential Trimethylaluminum and Hydrogen Fluoride Exposures: Evidence for a Conversion Mechanism
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Thermal Atomic Layer Etching of ZnO by a "Conversion-Etch" Mechanism Using Sequential Exposures of Hydrogen Fluoride and Trimethylaluminum
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Thermal atomic layer etching: A review
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