publication venue for
- Demonstration of long-pulse power amplification at 1 GHz using 4H-SiC RF BJTs on a conductive substrate 2007
- A novel high-speed silicon MSM photodetector operating at 830 nm wavelength 1995
- 105-GHz bandwidth metal-semiconductor-metal photodiode 1988
- 5.2-GHz bandwidth monolithic GaAs optoelectronic receiver 1988
- Submicrometer GaAs MESFET with shallow channel and very high transconductance 1987
- Scaled GaAs MESFET's with gate length down to 100 nm 1986